TOSHIBA TPH4R50ANH1,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TPH4R50ANH1,LQ

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Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)92A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.2nF
TypeN-Channel

Technical details

N-Channel 100V 92A 800mW Surface Mount SOP-8

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