TOSHIBA TPH4R50ANH,L1Q(M

TOSHIBA · FETs & Power MOSFETs · MPN TPH4R50ANH,L1Q(M

No reviews yet — be the first to review TOSHIBA TPH4R50ANH,L1Q(M.

Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4nF
TypeN-Channel

Technical details

N-Channel 100V 78W Surface Mount SOP-8-EP-5.0mm

Related FETs & Power MOSFETs