TOSHIBA · FETs & Power MOSFETs · MPN TPH4R50ANH,L1Q
No reviews yet — be the first to review TOSHIBA TPH4R50ANH,L1Q.
| Gate Charge(Qg) | 58nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.6W;78W |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.2nF |
100V 60A 4V 4.5mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS