TOSHIBA TPH4R10ANL,L1Q(M

TOSHIBA · FETs & Power MOSFETs · MPN TPH4R10ANL,L1Q(M

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage-
Current - Continuous Drain(Id)-
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number-
Input Capacitance(Ciss)-

Technical details

DSOP-8-EP-5.0mm Single FETs, MOSFETs RoHS

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