TOSHIBA TPH4R10ANL,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH4R10ANL,L1Q

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Specifications

Configuration-
Gate Charge(Qg)75nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)70A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation67W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.85nF

Technical details

N-Channel 100V 67W Surface Mount SOP-8

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