TOSHIBA · FETs & Power MOSFETs · MPN TPH4R10ANL,L1Q
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 75nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 67W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.85nF |
N-Channel 100V 67W Surface Mount SOP-8