TOSHIBA · FETs & Power MOSFETs · MPN TPH4R008NH1,LQ(M
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| Gate Charge(Qg) | 59nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 890pF |
| Current - Continuous Drain(Id) | 116A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 170W |
| RDS(on) | 3.3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.1nF |
| Type | N-Channel |
N-Channel 80V 170W Surface Mount SOP