TOSHIBA TPH4R008NH,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH4R008NH,L1Q

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Specifications

Gate Charge(Qg)59nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)100A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.3nF
TypeN-Channel

Technical details

80V 100A 4V 78W 4mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS

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