TOSHIBA · FETs & Power MOSFETs · MPN TPH3R10AQM,LQ
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| Gate Charge(Qg) | 83nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 210W |
| RDS(on) | 3.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.4nF |
| Type | N-Channel |
N-Channel 100V 120A 210W Surface Mount SOPADVANCE-8(5x5.8)