TOSHIBA TPH3R10AQM,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TPH3R10AQM,LQ

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Specifications

Gate Charge(Qg)83nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation210W
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.4nF
TypeN-Channel

Technical details

N-Channel 100V 120A 210W Surface Mount SOPADVANCE-8(5x5.8)

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