TOSHIBA TPH2R608NH,L1Q(M

TOSHIBA · FETs & Power MOSFETs · MPN TPH2R608NH,L1Q(M

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Specifications

Gate Charge(Qg)72nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)150A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation142W
RDS(on)2.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)4.6nF
TypeN-Channel

Technical details

N-Channel 75V 150A 142W Surface Mount SOP-8-Advance(5x6)

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