TOSHIBA TPH2R506PL,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH2R506PL,L1Q

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)60nC@10V
Current - Continuous Drain(Id)160A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation132W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)4.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.435nF
TypeN-Channel

Technical details

N-Channel 60V 160A 132W Surface Mount SOPAdvance-8(5x5)

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