TOSHIBA TPH2R408QM,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH2R408QM,L1Q

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)87nC@10V
Output Capacitance(Coss)1.34nF
Current - Continuous Drain(Id)120A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation3W;210W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)2.43mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.3nF
TypeN-Channel

Technical details

N-Channel 80V 120A 3W 210W Surface Mount SOP-8

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