TOSHIBA · FETs & Power MOSFETs · MPN TPH2R306NH1,LQ
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 72nC@10V |
| Current - Continuous Drain(Id) | 136A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 800mW;170W |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.1nF |
N-Channel 60V 136A 800mW 170W Surface Mount SOP-8