TOSHIBA TPH2R306NH,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH2R306NH,L1Q

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)72nC@10V
Output Capacitance(Coss)1.5nF
Current - Continuous Drain(Id)130A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)4.7mΩ@6.5V
Number1 N-channel
Input Capacitance(Ciss)6.1nF
TypeN-Channel

Technical details

N-Channel 60V 130A 78W Surface Mount VDFN-8(5x5)

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