TOSHIBA · FETs & Power MOSFETs · MPN TPH2900ENH,L1Q(M
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| Gate Charge(Qg) | 22nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 33A |
| Gate Threshold Voltage (Vgs(th)) | 2V;4V |
| Pd - Power Dissipation | 78W |
| RDS(on) | 24mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 200V Surface Mount SOP-8