TOSHIBA · FETs & Power MOSFETs · MPN TPH2900ENH,L1Q
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 22nC@10V |
| Current - Continuous Drain(Id) | 33A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 78W |
| RDS(on) | 29mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
200V 33A 4V 78W 29mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS