TOSHIBA · FETs & Power MOSFETs · MPN TPH2900ENH
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| Gate Charge(Qg) | 22nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 24mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
200V 33A 78W 24mΩ@10V 1 N-channel DFN-8-EP(6.1x5.2) Single FETs, MOSFETs RoHS