TOSHIBA TPH1R712MD,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH1R712MD,L1Q

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Specifications

Gate Charge(Qg)182nC@5V
Drain to Source Voltage20V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)60A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.7mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)10.9nF
TypeP-Channel

Technical details

P-Channel 20V 60A 78W Surface Mount SOP-8

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