TOSHIBA TPH1R403NL1,LQ(M

TOSHIBA · FETs & Power MOSFETs · MPN TPH1R403NL1,LQ(M

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.8nF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)93pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.4nF
TypeN-Channel

Technical details

N-Channel 30V 500W Surface Mount SOP-8

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