TOSHIBA TPH1R306PL1,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TPH1R306PL1,LQ

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Specifications

Gate Charge(Qg)91nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)1.16nF
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation210W
RDS(on)1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)80pF
Number1 N-channel
Input Capacitance(Ciss)6.25nF
TypeN-Channel

Technical details

N-Channel 60V 210W Surface Mount SOP-8

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