TOSHIBA TPH1R306PL,L1Q(M

TOSHIBA · FETs & Power MOSFETs · MPN TPH1R306PL,L1Q(M

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Specifications

Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)91nC@10V
Output Capacitance(Coss)1.16nF
Current - Continuous Drain(Id)260A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.25nF

Technical details

N-Channel 60V Surface Mount SOP-8

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