TOSHIBA · FETs & Power MOSFETs · MPN TPH1R306P1,L1Q(M
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| Output Capacitance(Coss) | 1.16nF |
|---|---|
| Pd - Power Dissipation | 170W |
| Gate Charge(Qg) | 91nC |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 0.96mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.25nF |
170W 60V 1.5V 0.96mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS