TOSHIBA TPH1R005PL,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH1R005PL,L1Q

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Specifications

Gate Charge(Qg)122nC@10V
Drain to Source Voltage45V
Output Capacitance(Coss)1.86nF
Current - Continuous Drain(Id)150A
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)1.04mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.6nF
TypeN-Channel

Technical details

N-Channel 45V 150A 170W Surface Mount SOP-8-5.0mm

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