TOSHIBA TPH14006NH,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH14006NH,L1Q

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)16nC@10V
Current - Continuous Drain(Id)-
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W;32W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF

Technical details

60V 4V 14mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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