TOSHIBA · FETs & Power MOSFETs · MPN TPH1110FNH,L1Q
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 10A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.6W;57W |
| RDS(on) | 112mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
250V 10A 4V 112mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS