TOSHIBA · FETs & Power MOSFETs · MPN TPH1110ENH,L1Q
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 7nC@10V |
| Current - Continuous Drain(Id) | 7.2A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.6W;42W |
| RDS(on) | 114mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
200V 7.2A 4V 114mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS