TOSHIBA · FETs & Power MOSFETs · MPN TPCP8011,LF
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| Gate Charge(Qg) | 11.8nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 5A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 940mW |
| RDS(on) | 51.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 505pF |
40V 5A 3V 940mW 51.2mΩ@10V 1 N-channel SMD-8P Single FETs, MOSFETs RoHS