TOSHIBA TPCC8093,L1Q(M

TOSHIBA · FETs & Power MOSFETs · MPN TPCC8093,L1Q(M

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Specifications

Gate Charge(Qg)16nC@5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)21A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation30W
RDS(on)5.8mΩ@4.5V
Number1 N-channel
TypeN-Channel

Technical details

20V 21A 1.2V 30W 5.8mΩ@4.5V 1 N-channel N-Channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS

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