TOSHIBA · FETs & Power MOSFETs · MPN TPC8132,LQ(S
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| Output Capacitance(Coss) | 230pF |
|---|---|
| Pd - Power Dissipation | 1W |
| Configuration | - |
| Gate Charge(Qg) | 34nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.58nF |
1W 40V 7A 800mV 25mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS