TOSHIBA TP89R103NL,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TP89R103NL,LQ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)9.8nC@10V
Current - Continuous Drain(Id)15A
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation1W
RDS(on)9.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)820pF

Technical details

30V 15A 2.3V 1W 9.1mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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