TOSHIBA · FETs & Power MOSFETs · MPN TK9P65W,RQ
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 9.3A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 80W |
| RDS(on) | 560mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 700pF |
650V 9.3A 3.5V 80W 560mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS