TOSHIBA · FETs & Power MOSFETs · MPN TK9J90E,S1E
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| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 150pF |
| Current - Continuous Drain(Id) | 9A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 1.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Type | N-Channel |
N-Channel 900V 9A 250W Through Hole TO-3P(N)