TOSHIBA · FETs & Power MOSFETs · MPN TK9A90E,S4X
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| Output Capacitance(Coss) | 150pF |
|---|---|
| Pd - Power Dissipation | 50W |
| Configuration | - |
| Gate Charge(Qg) | 46nC@10V |
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 1.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
50W 900V 9A 4V 1.3Ω@10V 1 N-channel N-Channel TO-220SIS Single FETs, MOSFETs RoHS