TOSHIBA · FETs & Power MOSFETs · MPN TK9A60D(STA4,Q,M)
No reviews yet — be the first to review TOSHIBA TK9A60D(STA4,Q,M).
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 24nC@10V |
| Current - Continuous Drain(Id) | 9A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| RDS(on) | 830mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
600V 9A 4V 45W 830mΩ@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS