TOSHIBA · FETs & Power MOSFETs · MPN TK9A55DA(STA4,Q,M)
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 8.5A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 40W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.05nF |
550V 8.5A 4V 40W 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS