TOSHIBA · FETs & Power MOSFETs · MPN TK90S06N1L,LQ
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| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 90A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 157W |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
60V 90A 2.5V 157W 3.3mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS