TOSHIBA · FETs & Power MOSFETs · MPN TK8R2A06PL,S4X
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 50A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 36W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 8.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.99nF |
| Type | N-Channel |
60V 50A 2.5V 36W 8.2mΩ@10V 1 N-channel N-Channel TO-220SIS Single FETs, MOSFETs RoHS