TOSHIBA TK8P60W5,RVQ

TOSHIBA · FETs & Power MOSFETs · MPN TK8P60W5,RVQ

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)22nC@10V
Current - Continuous Drain(Id)8A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation80W
RDS(on)560mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)590pF

Technical details

600V 8A 4.5V 80W 560mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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