TOSHIBA TK8A65D(STA4,X,M)

TOSHIBA · FETs & Power MOSFETs · MPN TK8A65D(STA4,X,M)

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)135pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)700mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel

Technical details

N-Channel 650V 8A 45W Through Hole ITO-220S-3

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