TOSHIBA · FETs & Power MOSFETs · MPN TK8A65D(STA4,Q,M)
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| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 135pF |
| Current - Continuous Drain(Id) | 8A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 840mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.35nF |
| Type | N-Channel |
N-Channel 650V 8A 45W Through Hole TO-220SIS