TOSHIBA TK8A60W,S4VX

TOSHIBA · FETs & Power MOSFETs · MPN TK8A60W,S4VX

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)18.5nC@10V
Current - Continuous Drain(Id)8A
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation30W
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)570pF

Technical details

600V 8A 3.7V 30W 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS

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