TOSHIBA · FETs & Power MOSFETs · MPN TK8A55DA(STA4,Q,M)
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| Drain to Source Voltage | 550V |
|---|---|
| Gate Charge(Qg) | 16nC@10V |
| Current - Continuous Drain(Id) | 7.5A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 40W |
| RDS(on) | 1.07Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 800pF |
550V 7.5A 4V 40W 1.07Ω@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS