TOSHIBA TK8A50DA(STA4,Q,M)

TOSHIBA · FETs & Power MOSFETs · MPN TK8A50DA(STA4,Q,M)

No reviews yet — be the first to review TOSHIBA TK8A50DA(STA4,Q,M).

Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)7.5A
Gate Threshold Voltage (Vgs(th))4.4V
Pd - Power Dissipation35W
RDS(on)1.04Ω@10V
Number1 N-channel
Input Capacitance(Ciss)700pF

Technical details

500V 7.5A 4.4V 35W 1.04Ω@10V 1 N-channel TO-220SIS Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs