TOSHIBA TK8A50D(STA4,X,M)

TOSHIBA · FETs & Power MOSFETs · MPN TK8A50D(STA4,X,M)

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)850mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

N-Channel 500V 8A 40W Through Hole TO-220

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