TOSHIBA TK7R7P10PL,RQ

TOSHIBA · FETs & Power MOSFETs · MPN TK7R7P10PL,RQ

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)55A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation93W
RDS(on)7.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF

Technical details

100V 55A 2.5V 93W 7.7mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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