TOSHIBA TK7R0E08QM,S1X

TOSHIBA · FETs & Power MOSFETs · MPN TK7R0E08QM,S1X

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)39nC@10V
Current - Continuous Drain(Id)64A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation87W
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)2.7nF

Technical details

80V 64A 3.5V 87W 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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