TOSHIBA · FETs & Power MOSFETs · MPN TK7Q60W,S1VQ
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 7A |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 60W |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 490pF |
600V 7A 3.7V 60W 600mΩ@10V 1 N-channel IPAK Single FETs, MOSFETs RoHS