TOSHIBA · FETs & Power MOSFETs · MPN TK7J90E,S1E
No reviews yet — be the first to review TOSHIBA TK7J90E,S1E.
| Drain to Source Voltage | 900V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | 7A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| RDS(on) | 2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.35nF |
900V 7A 4V 200W 2Ω@10V 1 N-channel TO-3P(N) Single FETs, MOSFETs RoHS