TOSHIBA TK7A90E,S4X(S

TOSHIBA · FETs & Power MOSFETs · MPN TK7A90E,S4X(S

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage900V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)110pF
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)1.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel

Technical details

N-Channel 900V 7A 45W Through Hole TO-220SIS

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