TOSHIBA TK7A65D(STA4,Q,M)

TOSHIBA · FETs & Power MOSFETs · MPN TK7A65D(STA4,Q,M)

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)7A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)980mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

650V 7A 4V 45W 980mΩ@10V 1 N-channel N-Channel TO-220SIS Single FETs, MOSFETs RoHS

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