TOSHIBA TK750A60F

TOSHIBA · FETs & Power MOSFETs · MPN TK750A60F

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)8.5pF
RDS(on)620mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.13nF

Technical details

600V 10A 40W 620mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS

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